IEEE EDS Boise Chapter Meeting: "Resistance Change Materials: A New Development in Random Access Memory"

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The IEEE EDS Boise Chapter will feature Prof. Alex Ignatiev from the University of Houston. Prof. Ignatiev will present the following talk, "Resistance Change Materials: A New Development in Random Access Memory".

  Date and Time

  Location

  Contact

  Registration


  • Boise State University
  • 1020 Manitou Ave.
  • Boise, Idaho
  • United States 83706
  • Building: Micron Engineering Center (MEC)
  • Room Number: 114
  • Click here for Map

Staticmap?size=250x200&sensor=false&zoom=14&markers=43.600708007813%2c 116
  • Prof. Maria Mitkova 208-426-1319, mariamitkova@boisestate.edu; Jaydip Guha 208-371-5826
  • Co-sponsored by Prof. Maria Mitkova


  Speakers

Dr. Alex Ignatiev
Dr. Alex Ignatiev of University of Houston

Topic:

Resistance Change Materials: A New Development in Random Access Memory

Biography: Alex Ignatiev is the Director of the Center for Advanced Materials and Distinguished University Professor of Physics, Chemistry, and Electrical and Computer Engineering at the University of Houston. Ignatiev received a B.S. in Physics and Applied Mathematics from the University of Wisconsin his Ph.D. in Materials Science from Cornell University. Ignatiev has worked in advanced materials in the space environment since he originated the
concept of the Wake Shield Facility (WSF), which focused on the utilization of the vacuum of space for the growth and fabrication of advanced thin film semiconductor materials and devices for the microelectronics and energy fields. He has closely worked with the Marshall Space Flight Center and the Johnson Space Center on the three Shuttle flights of the WSF, and continues to advance materials applications in space.
Ignatiev’s research interests have been focused on advanced thin film materials and device development and surface chemical interactions that form the basis for thin film growth. Recent efforts have been in the advancement of a new memory technology--resistive memory, which was first identified in Ignatiev’s lab. This work is resulting in the development of resistive random access memory as a nonvolatile, fast, low energy switching computer memory.
Ignatiev has published more than 300 scientific articles, has 16 patents, is on the editorial boards of two scientific journals, is a member of 12 scientific societies, and has been elected to the International Academy of Astronautics.

Email:

Address:Center for Advanced Materials, 724 Science & Research Building One, Houston, Texas, United States, 77204-5004