Nanoscale Silicon-based Electro-optics Towards Integrated Optical Communication

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Silicon-based light-emitting devices are extremely desirable for the realization of integrated optical signal processing with electronic data processing. This is in tandem with efforts to develop a generation of ultrafast computers based on the combined electronic and optical signal processing on the one hand, and advanced generations of optoelectronic devices for optical communication systems on the other hand. To address such concerns and needs, series of new nanoscale silicon-based electro-optics devices (transistors, capacitors, photo-activated and thermo-activated modulators, sensors, waveguides…), coupling both electrical and optical properties have been developed by the ALEO (Advanced Laboratory of Electro-Optics) Research Team (https://www.aleo.solutions/).

 

As an example, a new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon band-gap constraint, and to serve as a future light emitting device in NIR [1-2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model, simulations and measurements are continuous work.



  Date and Time

  Location

  Contact

  Registration



  • Rochester Institute of Technology
  • 82 Lomb Memorial Drive
  • Rochester, New York
  • United States 14623
  • Building: 17 - Engineering Hall
  • Room Number: 17-2510
  • Santosh Kurinec, skkemc@rit.edu

  • Co-sponsored by Microelectronic Engineering, RIT


  Speakers

Avi Karsenty of Hebrew University of Jerusalem, Isreal

Topic:

Nanoscale Silicon-based Electro-optics Towards Integrated Optical Communication

Silicon-based light-emitting devices are extremely desirable for the realization of integrated optical signal processing with electronic data processing. This is in tandem with efforts to develop a generation of ultrafast computers based on the combined electronic and optical signal processing on the one hand, and advanced generations of optoelectronic devices for optical communication systems on the other hand. To address such concerns and needs, series of new nanoscale silicon-based electro-optics devices (transistors, capacitors, photo-activated and thermo-activated modulators, sensors, waveguides…), coupling both electrical and optical properties have been developed by the ALEO (Advanced Laboratory of Electro-Optics) Research Team (https://www.aleo.solutions/).

 

As an example, a new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon band-gap constraint, and to serve as a future light emitting device in NIR [1-2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model, simulations and measurements are continuous work.

Biography:

Avi Karsenty received the PhD degree in Applied Physics/Material Science (Microelectronics and Electro-Optics Divisions) from the Hebrew University of Jerusalem in 2003. His main research focuses on nanoscale electro-optics coupled-devices. In Oct’11, he came back to the academy (JCT) with the Vision to build student next generations, and to reinforce the bridge between Academy and Industry. After 22 years in High-Tech industries, part of which as Engineer and Manager for 16 years with Intel, he is today the Head of the Physics/Electro-Optics Engineering Department. Dr. Karsenty is IEEE Senior Member and OSA Senior Member, and received 40 Awards in Engineering/Physics. He has three main Research Interests & Expertise: Development of Quantum Electro-Optics (EO) Coupled Devices, Quality & Reliability Engineering aspects of devices, and Improvement of EO measurement techniques.