Joint MOS-AK workshop & Symposium on Schottky Barrier MOS devices 2020 & IEEE MQ "Non-Conventional Devices and Technologies"

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The joint MOS-AK Workshop and Symposium on Schottky Barrier MOS (SB-MOS) devices is held from September 29th to October 1st 2020 at the Technische Hochschule Mittelhessen – University of Applied Sciences, Germany. This is the first joint R&D event between MOS-AK and Symposium of SB-MOS. Additionally, in the time frame an IEEE EDS Mini-Colloquium on „Non-conventional Devices and Technologies“ will take place.

This year the joint R&D event is sponsored by THM, the IEEE EDS Germany chapter, IEEE Young Professionals Germany Affinity Group, AdMOS GmbH, and organized by Dr. Laurie Calvet (C2N, Palaiseau, France), Dr. Mike Schwarz (Robert Bosch GmbH, NanoP THM, Germany), Dr. Wladek Grabinski (MOS-AK Association, EU), Prof. Alexander Kloes (NanoP THM, Germany), and the staff at the Center for Nanotechnology and Photonics at TH Mittelhessen. 

Our joint R&D event starts on September 29th at 9:15 am with a MOS-AK workshop. The workshop continues on September 30th morning to noon. In the afternoon, the IEEE EDS Mini-Colloquium „Non-Conventional Devices and Technologies“ will take place and will continue during the moring of  October 1st . In the afternoon, the Symposium on SB-MOS is held. The event will be virtual due to the world pandemic of COVID-19.

Attendees are welcome to participate in our joint R&D event. The attendees are limited in total to 300. Further information is present at

Symposium of SBMOS
https://ssbmos.blogspot.com

and

MOS-AK
http://www.mos-ak.org/giessen_2020



  Date and Time

  Location

  Hosts

  Registration



  • Virtual, Hessen
  • Germany 35390

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  • Co-sponsored by IEEE EDS Germany chapter, IEEE Young Professionals Germany Affinity Group
  • Starts 07 March 2020 12:00 AM
  • Ends 25 September 2020 11:59 PM
  • All times are Europe/Berlin
  • No Admission Charge
  • Register