Sorin Cristoloveanu DL - Revolutionary nano-devices with electrostatic doping


The EDS Germany Chapter and NanoP proudly presents Sorin Cristoloveanu from IMEP-LAHC, France for a Distinguished Lecture on "Revolutionary nano-devices with electrostatic doping". The lecture will be held on 25th October 2021 at 4pm Berlin time.

  Date and Time




  • Date: 25 Oct 2021
  • Time: 04:00 PM to 05:00 PM
  • All times are (UTC+01:00) Berlin
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The Distiguished Lecture will be held via Zoom. Login information provided before the event and requires registration.

  • Co-sponsored by NanoP, Technische Hochschule Mittelhessen - University of Applied Sciences
  • Starts 17 September 2021 12:00 AM
  • Ends 22 October 2021 12:00 PM
  • All times are (UTC+01:00) Berlin
  • No Admission Charge



Revolutionary nano-devices with electrostatic doping

The theory and strategy of down-scaling impose devices with sub-10 nm thickness that are naturally fully depleted. Full depletion operation benefits from a number of mechanisms such as interface coupling, back-gate biasing, etc. The ‘electrostatic doping’, also defined as gate-induced charge, is a unique feature of nano-size structures: FD-SOI, nanowires, nanotubes, and 2D materials. In an ultrathin device, a positive gate bias induces electrons that spreadacross the entire body (volume inversion or accumulation). This effect is very different from the charge-sheet interface layer formed in bulk semiconductors or in thick SOI. The thinner the film, the more uniform the in-depth carrier distribution. The original undoped body suddenly behaves as an N-doped region. Changing the polarity of the gate bias turns the body into a P-type region.

The electrostatic doping can be contemplated as a chance to form junctions and contacts in technologies where ion implantation is not applicable. A more optimistic view is to take advantage of the fascinating flexibilityof electrostatic doping for conceiving novel and reconfigurable devices with unrivalled performance.For example, the band-modulation devices consist of successive N and P regions that are electrostatically doped to emulate a thyristor NPNP. The operation of sharp-switching devices like tunneling FET (TFET), I-MOS and Electron-Hole Bilayer TFET also relies on electrostatic doping.

Another interesting device is the Hocus-Pocus diode which can be emulated in ultrathin, fully-depleted Silicon-On-Insulator (FD-SOI) films by appropriately biasing the front and back gates. Adjacent electron and hole populations form a virtual P-N junction. The current-voltage characteristics reveal similarities and major differences with those of conventional P-N diodes with ion-implanted doping. A distinct merit of the virtual diode is the possibility to adjust the concentrations of electrostatic doping via the gates. The reverse current, forward current and depletion depth become gate-controlled. An astonishing dopingless Esaki diode has been experimentally demonstrated. By modifying the typeof electrostatic doping (N or P), the virtual diode can be reconfigured in 8 other devices: semi-virtual diodes, PIN diodes, TFETs or band-modulation FET. We will discuss the physics, architecture, processing, and applications for the most promising devices with electrostatic doping.


Sorin Cristoloveanu received the PhD (1976) in Electronics and the French Doctoratès-Sciences in Physics (1981) from Grenoble Polytechnic Institute, France. He is currently Emeritus Director of Research CNRS. He also worked at JPL (Pasadena), Motorola (Phoenix), and the Universities of Maryland, Florida, Vanderbilt, Western Australia, Kyungpook (World Class University project, Korea), and Nanjing, China. He served as the director of the LPCS Laboratory and the Center for Advanced Projects in Microelectronics, initial seed of Minatec center. He authored more than 1,100 technical journal papers and communications at international conferences (including 170 invited contributions). He is the author or the editor of 36 books, and he has organized 35 international conferences. His expertise is in the area of the electrical characterization and modeling of semiconductor materials and devices, with special interest for silicon-on-insulator structures. He has supervised more than 110 PhD completions. With his students, he has received 17 Best Paper Awards, an Academy of Science Award (1995), and the Electronics Division Award of the Electrochemical Society (2002). He is a Life Fellow of IEEE, a Fellow of the Electrochemical Society, Doctor Honoris Causa of the University of Granada, and Editor of Solid-State Electronics. He is the recipient of the IEEE Andy Grove award 2017, the most prestigious distinction in the field of electronic components, for contributions to ‘silicon-on-insulator technology and thin body devices’. This is actually the topic of his recent book